-
Nanotechnology Polyaniline TCS LightEmiting ForceVolume Butterfly Yeditepe Annealed BreastCancerCell Celebration hard_disk_media Polystyrene ChemicalCompound Alkane Croatia Vinylpyridine Bismuth Pinpoint InsulatorFilm STO InLiquid membrane AM_SKPM ImideMonomer plastic DataStorage IMT_Bucharest Inorganic_Compound PiezoelectricForceMicroscopy Defects Spain PVA Phosphide 2dMaterials CarbonNanotube
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
AlN/GaN/AlN Hetero Structure
AlN/GaN/AlN hetero structure grown on SiC substrate by Molecular Beam Epitaxy (MBE) system.
Scanning Conditions
- System: NX20
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 5μm×5μm
- Scan Rate: 0.5Hz
- Pixel Size: 512 × 512
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 5μm×5μm
- Scan Rate: 0.5Hz
- Pixel Size: 512 × 512