-
LiftHeight Mechinical DNAProtein molecules TransitionMetal lithography DNA Ferrite rubber STO Monisha Lanthanum_aluminate Solution Ananth Oxide StrontiuTitanate ElectroChemical RedBloodCell Spincast Materials Granada Alkane Implant PVAP3HT Scanning_Thermal_Microscopy PMNPT Chemical Vapor Deposition Electical&Electronics DentalProsthesis small_scan HACrystal Subhajjit PDMS Plug ring shape
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
AlN/GaN/AlN Hetero Structure
AlN/GaN/AlN hetero structure grown on SiC substrate by Molecular Beam Epitaxy (MBE) system.
Scanning Conditions
- System: NX20
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 5μm×5μm
- Scan Rate: 0.5Hz
- Pixel Size: 512 × 512
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 5μm×5μm
- Scan Rate: 0.5Hz
- Pixel Size: 512 × 512