-
Fluoride Ni81Fe19 Au111 Piezo layers Step Wang conductive MoirePattern FAPbI3 fe_nd_b PVA Pinpoint NUS Calcium MfmPhase Galfenol HexagonalBN NusEce pulsed_laser_deposition MechanicalProperty LateralForce Self-assembledMonolayer UnivOfMaryland dielectric trench kelvin probe force microscopy FrictionForce LightEmission Praseodymium Device Sulfur Spain FastScan Aggregated_molecules 2dMaterials
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
SiC MOSFET
Scanning Conditions
- System: NX-Hivac
- Scan Mode: SSRM
- Cantilever: Full diamond (k=27 N/m)
- Scan Size: 2μm×2μm
- Scan Rate: 0.5Hz
- Pixel: 256×512
- Sample Bias: +2.5V
- Scan Mode: SSRM
- Cantilever: Full diamond (k=27 N/m)
- Scan Size: 2μm×2μm
- Scan Rate: 0.5Hz
- Pixel: 256×512
- Sample Bias: +2.5V