-
ThermalDetectors CrossSection align PolyvinylAcetate PolyStylene amplitude_modulation Kevlar OpticalWaveguide vertical_PFM GalliumPhosphide LiNbO3 Graphite SmalScan medical Pzt Phthalocyanine AM-KPFM Ni81Fe19 pulsed_laser_deposition Layer Ucl UnivOfMaryland contact PolymerPatterns Ptfe Chloroform FailureAnalysis high_resolution Titanate Lateral_Force_Microscopy Wang Pyroelectric SiWafer Grain FAPbI3
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
AlN/GaN/AlN Hetero Structure
AlN/GaN/AlN hetero structure grown on SiC substrate by Molecular Beam Epitaxy (MBE) system.
Scanning Conditions
- System: NX20
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 5μm×5μm
- Scan Rate: 0.5Hz
- Pixel Size: 512 × 512
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 5μm×5μm
- Scan Rate: 0.5Hz
- Pixel Size: 512 × 512